作者
R Kucharski, M Rudziński, M Zając, R Doradziński, J Garczyński, L Sierzputowski, R Kudrawiec, J Serafińczuk, W Strupiński, R Dwiliński
发表日期
2009/9/28
期刊
Applied Physics Letters
卷号
95
期号
13
出版商
AIP Publishing
简介
In this letter, the authors demonstrate large size m-plane GaN substrates grown by ammonothermal method. These substrates have excellent structural quality. The concentration of threading dislocation density is below 5× 10 4 cm− 2 and the full width at half maximum for the symmetrical and asymmetrical peaks equals 16 and 19 arc sec, respectively. Also good optical quality, the energy gap-related transition is clearly observed at room temperature in photoluminescence and contactless electroreflectance spectra. GaN epilayers deposited on these substrates exhibit intrinsic narrow exciton lines which are very sensitive to the optical selection rules typical for hexagonal symmetry, proving truly nonpolar character of the material.
学术搜索中的文章
R Kucharski, M Rudziński, M Zając, R Doradziński… - Applied Physics Letters, 2009