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Ultraviolet (UV) photodetectors play an important role in numerous commercial and scientific applications. The UV photodetectors based on binary‐cation indium zinc oxide (InZnO) thin films exhibit great performance enhancement, compared with their single‐cation counterparts. However, UV photodetectors based on 1D InZnO nanowires could potentially exhibit more superior optoelectrical performance, due to the large surface‐to‐volume ratio and favorable carrier transport characteristics of nanowires. This work has combined combustion synthesis with electrospinning technique to efficiently fabricate InZnO nanowire‐based UV photodetectors. At the annealing temperature of 375 °C, the newly designed InZnO nanowire photodetectors exhibit excellent photoelectric performance under the irradiation of 310 nm UV light, including a photo‐to‐dark current ratio of 1.2 × 10⁴, a photo responsivity of 2.8 × 10³ A W^–1 …