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The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN x), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN x films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN x and evaluate the film’s WER in 100: 1 dilutions of HF in H 2 O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN x film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the …