作者
Soogine Chong, Byoungil Lee, Kokab B Parizi, J Provine, Subhasish Mitra, Roger T Howe, H-S Philip Wong
发表日期
2011/12/5
研讨会论文
2011 International Electron Devices Meeting
页码范围
30.5. 1-30.5. 4
出版商
IEEE
简介
This paper demonstrates electrical results of an integrated Si CMOS-electrostatically actuated nanoelectromechanical (NEM) relay circuit. This is an initial step towards realizing previously proposed NEM-CMOS hybrid circuits that predict various benefits compared to CMOS-only circuits. In this work, an e-beam patterned laterally actuated Pt NEM relay is fabricated at CMOS-compatible temperatures (≤ 400 °C) on top of CMOS and is driven by an on-chip CMOS inverter at V DD = 6 V.
学术搜索中的文章
Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit
S Chong, B Lee, KB Parizi, J Provine, S Mitra, RT Howe… - 2011 International Electron Devices Meeting, 2011