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The mechanisms for silicon (Si) defect and nanocrystal related white and near-infrared electroluminescences (ELs) of Si-rich SiO 2 films synthesized by Si-ion implantation and plasma-enhanced chemical-vapor deposition (PECVD) are investigated. The strong photoluminescence (PL) of Si-ion-implanted SiO 2 (SiO 2: Si+) at 415–455 nm contributed by weak-oxygen bond and neutral oxygen vacancy defects is observed after 1100 C annealing for 180 min. The white-light EL of a reverse-biased SiO 2: Si+ metal-oxide-semiconductor (MOS) diode with a turn-on voltage of 3.3 V originates from the minority-carrier tunneling and recombination in the defect states of SiO 2: Si+⁠, which exhibits maximum EL power of 120 nW at bias of 15 V with a power–current slope of 2.2 μ W∕ A⁠. The precipitation of nanocrystallite silicon (nc-Si) in SiO 2: Si+ is less pronounced due to relatively small excess Si density. In contrast, the …