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This paper presents the performance of a wideband 0.13 mum BiCMOS SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design and the measured results of a monolithic integrated low-voltage PA are reported. A balanced four-stage common emitter circuit topology was used to achieve greater than 17 dB of power gain from 59 GHz to 71 GHz. As a result, the amplifier delivers 18 dBm of maximum RF output power and 14.5 dBm output power at 1 dB compression. The circuit shows 7.8% of power added efficiency (PAE) from a 1.8 V supply voltage at 65 GHz. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors for high integration purpose.