作者
C Tinella, O Richard, A Cathelin, F Reaute, S Majcherczak, F Blanchet, D Belot
发表日期
2006/1/18
研讨会论文
Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
页码范围
4 pp.
出版商
IEEE
简介
This paper presents the design of a single pole 6 throw antenna switch able to manage all the four GSM standards, i.e. 850-900-1800-1900 MHz. The switch has been integrated in a 0.13mum CMOS SOI process with high resistivity substrate and a thick oxide (50Aring) option. The use of high resistivity substrate allows a good loss (IL)-isolation trade-off: IL is kept in the range of 0.55-0.8 dB for the RXs and at 0.7 dB for the TXs, while isolation varies from 40 dB at 900 MHz to 30 dB at 1900 MHz. Power handling capability is well compatible with GSM standards since an ICP 0.1dB of 36 dBm has been measured and harmonics distortion is below -39 dBm for an input power of 34 dBm. Robustness to antenna mismatching condition has been successfully demonstrated up to a VSWR of 10:1. The chip size is of 1.23 mm 2 and the power consumption is below 10muA and 0.5 mA respectively in stand by mode and during …
引用总数
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C Tinella, O Richard, A Cathelin, F Reaute… - Digest of Papers. 2006 Topical Meeting on Silicon …, 2006