作者
Can Li, Daniel Belkin, Yunning Li, Peng Yan, Miao Hu, Ning Ge, Hao Jiang, Eric Montgomery, Peng Lin, Zhongrui Wang, Wenhao Song, John Paul Strachan, Mark Barnell, Qing Wu, R Stanley Williams, J Joshua Yang, Qiangfei Xia
发表日期
2018/6/19
期刊
Nature communications
卷号
9
期号
1
页码范围
2385
出版商
Nature Publishing Group UK
简介
Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency.
引用总数
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