作者
Tiantian Li, Milos Nedeljkovic, Nannicha Hattasan, Wei Cao, Zhibo Qu, Callum G Littlejohns, Jordi Soler Penades, Lorenzo Mastronardi, Vinita Mittal, Daniel Benedikovic, David J Thomson, Frederic Y Gardes, Hequan Wu, Zhiping Zhou, Goran Z Mashanovich
发表日期
2019/8/1
期刊
Photonics Research
卷号
7
期号
8
页码范围
828-836
出版商
Optica Publishing Group
简介
We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and 8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a V_π·L of 0.47 V·cm. Driven by a 2.5V_pp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
学术搜索中的文章
T Li, M Nedeljkovic, N Hattasan, W Cao, Z Qu… - Photonics Research, 2019