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X Li, Y-C Fu, DAJ Millar, U Peralagu, M Steer, IG Thayne

2016/12/10

The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2 - Enlighten Publications Skip to main content Accessibility information Site navigation Study Research About us Student life Alumni Support us Contact Site tools AZ Lists Subjects AZ Staff AZ Academic units AZ University of Glasgow logo Home Enlighten Publications Enlighten Publications About Latest Additions Search Browse Browse by Author Browse by Year Browse by Journal Browse by Research Funder Name Browse by Colleges/Schools Open Access ORCID My Publications Login The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2 Li, X. , Fu, Y.-C., Millar, DAJ, Peralagu, U. , Steer, M. and Thayne, IG (2016) The …