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In this work we demonstrate for the first time that the excellent thermal stability of ultra-thin body (UTB) III-V heterostructures on silicon provides a path for the cointegration of self-aligned In _0.53 Ga _0.47 As MOSFETs with silicon. We first demonstrate that the transfer of high-quality InGaAs / InAlAs heterostructures (t _ch < 10 nm) can be achieved by direct wafer bonding and hydrogen-induced thermal splitting, and that the donor wafer can be recycled for a cost-effective process. The thermal stability of the bonded layer enables to integrate UTB III-V MOSFETs at 500 nm pitch using a gate-first flow featuring raised source/drain (S/D) grown at 600ºC. The expected benefit of an UTB structure is benchmarked by comparing sub-threshold slope (SS) and drain-induced-barrier-lowering (DIBL) against state-of-the-art III-V-o-I or Tri-Gate FET data.