作者
Di Han, Silong Li, Yujiang Wu, Wooyoung Choi, Bulent Sarlioglu
发表日期
2017/3/14
期刊
IEEE Transactions on Industrial Electronics
卷号
64
期号
10
页码范围
8353-8363
出版商
IEEE
简介
Silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron mobility transistors are perceived as future replacements for Si IGBTs and MOSFETs in medium- and low-voltage drives due to their low conduction and switching losses. However, it is widely believed that the already significant conducted common-mode (CM) electromagnetic interference (EMI) emission of motor drives will be further exacerbated by the high-speed switching operation of these new devices. Hence, this paper investigates and quantifies the increase in the conducted CM EMI emission of a pulse width modulation inverter-based motor drive when SiC and GaN devices are adopted. Through an analytical approach, the results reveal that the influence of dv/dt on the conducted CM emission is generally limited. On the other hand, the influence of switching frequency is more significant. Lab tests are also conducted to verify the analysis.
学术搜索中的文章
D Han, S Li, Y Wu, W Choi, B Sarlioglu - IEEE Transactions on Industrial Electronics, 2017