查看文章

In this paper we report the growth of Cd_1−xMn_xTe superlattices (varying x) on GaAs substrates. Transmission electron microscopy of thinned specimens clearly show layers of uniform composition with abrupt interfaces; the lattice mismatch (≂0.6%) between superlattice layers is accomodated by elastic strain rather than misfit dislocation networks. The superlattices consistently show orders of magnitude greater photoluminescence (PL) intensity compared to thin films and bulk samples; in fact, the PL intensity is somewhat larger than that obtained from state of the art (Ga, Al) As double heterostructures under identical conditions of excitation. Removal of the substrate by etching produces a shift in the PL peak as well as a reduction in the spectral width indicating that the presence of the substrate causes inhomogeneous broadening due to nonuniform strains.