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In this letter we report the first growth of wide gap II‐VI semiconductor superlattices of Zn_1−xMn_xSe (0<x<0.51). The superlattices are grown by molecular beam epitaxy. Bulk crystals of Zn_1−xMn_xSe (0<x<0.57) grown in the past have shown a predominance of the zincblende phase only up to x=0.3; above this mole fraction a predominance of the hexagonal phase is observed. For the superlattices and epilayers reported here, only the zincblende phase (100) is present over the entire composition range investigated. Transmission electron microscopy shows clear evidence of the superlattice structure. Photoluminescence measurements of ZnSe epilayers show a dominant free‐exciton feature while the Zn_1−xMn_xSe epilayers exhibit two distinct photoluminescence peaks. The relative intensities of band‐to‐band transitions and Mn‐related transitions are somewhat comparable for the epilayers. However, the …