查看文章

A developed physical model and a simulation algorithm are used to predict electromigration (EM)-induced stress evolution in dual-inlaid copper interconnects. Incorporation of all important atom migration driving forces into the mass balance equation and its solution, together with the solution of the coupled electromagnetics and elasticity problems, allows the simulation of EM-induced degradation in a variety of dual-inlaid copper interconnect segments with different dominant paths for mass transport [V. Sukharev and E. Zschech, J. Appl. Phys. 96, 6337 (2004)]. The results of the numerical simulation have been proven experimentally by EM degradation studies on fully embedded dual-inlaid copper interconnect test structures and by subsequent microstructure analysis, mainly based on electron backscatter diffraction (EBSD) data. The EM-induced void formation and its virtual movement and growth in a copper …