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We report on x-ray microscopy of advanced microelectronic devices imaged in Zernike-type phase contrast mode at 4 keV photon energy. Fresnel zone plates were used as high resolution x-ray objectives providing 60 nm spatial resolution. Integrated circuit copper interconnect structures were imaged in positive as well as negative phase contrast. In both cases the phase contrast in the x-ray images is about five times higher than the pure absorption contrast.