作者
U Neuhäusler, G Schneider, Wolfgang Ludwig, MA Meyer, E Zschech, D Hambach
发表日期
2003/4/22
期刊
Journal of Physics D: Applied Physics
卷号
36
期号
10A
页码范围
A79
出版商
IOP Publishing
简介
We report on x-ray microscopy of advanced microelectronic devices imaged in Zernike-type phase contrast mode at 4 keV photon energy. Fresnel zone plates were used as high resolution x-ray objectives providing 60 nm spatial resolution. Integrated circuit copper interconnect structures were imaged in positive as well as negative phase contrast. In both cases the phase contrast in the x-ray images is about five times higher than the pure absorption contrast.
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U Neuhäusler, G Schneider, W Ludwig, MA Meyer… - Journal of Physics D: Applied Physics, 2003