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2D Transition Metal Dichalcogenides (TMDCs) have unique optical and electronic properties. Therefore, by using 2D TMDCs in solar cells, it is expected to improve photovoltaic characteristics of a solar cell. In this study, Zinc oxide (ZnO)/Tungsten disulfide (WS2)/Cu2ZnSnS4 (CZTS) solar cell structure is considered and the cell performance is investigated by using one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D) software. ZnO, WS2 and CZTS are used as transparent conducting oxide (TCO), buffer layer and absorber, respectively. WS2 is used as the buffer layer because of its good conductivity high carrier mobility and high optical absorption coefficient. The effects of absorber and buffer layer doping level and thicknesses on device performance are investigated. The highest device performance is obtained for the monolayer WS2 (ND= 1× 1018 cm-3) and 3 µm thick CZTS (NA= 1× 1017 cm-3) layer. The power conversion efficiency (PCE), fill factor (FF), open circuit voltage (VOC) and short circuit current (JSC) values are calculated as 28.05%, 82%, 0.71 V and 47 mA/cm2, respectively. Best of our knowledge, this is the first study using atomically thin WS2 as the buffer layer and the i-ZnO/n-WS2/p-CZTS solar cell structure. Higher efficiency is obtained with the i-ZnO/n-WS2/p-CZTS structure compared to similar solar cell structures using TMDCs. The obtained results are showed that WS2 has high potential for photovoltaic applications.