作者
André Fekecs, Andreas Korinek, Martin Chicoine, Bouraoui Ilahi, François Schiettekatte, Denis Morris, Richard Arès
发表日期
2015
期刊
Phys. Status Solidi B
卷号
252
期号
8
页码范围
1693
简介
With a postgrowth process such as Fe ion implantation and rapid thermal annealing (RTA), one can modify a single layer bulk InGaAsP/InP heterostructure into a complex nanostructured material that is promising for the development of ultrafast optoelectronic switching and photomixing devices. This paper brings forward additional connections to be made between microstructural parameters and functional properties of this material that are RTA-temperature dependent.
学术搜索中的文章
A Fekecs, A Korinek, M Chicoine, B Ilahi… - Phys. Status Solidi B, 2015