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This study focuses on the etching characteristics of a TiN hard mask in terms of etch rate and faceting when using a dielectric etch process. The etching experiments have been performed on blanket wafers and patterned structures in an inductively coupled plasma using a conventional C F 4∕ Ar based plasma. The etch rate and faceting of TiN have been measured as a function of the plasma parameters (bias power and pressure) and also plasma chemistries (Ar dilution and C H 2 F 2 addition). The TiN etch rate is about 30 nm min− 1 using the base line process conditions (⁠ 70 SCCM C F 4⁠, source power of 500 W⁠, bias power of 100 W⁠, and pressure of 4 mTorr⁠). Lower etch rate is observed at lower pressure and bias power and with higher Ar dilution and C H 2 F 2 addition. The faceting is strongly reduced at lower bias power and higher pressure whereas higher Ar dilution and C H 2 F 2 addition have no …