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A polarization rotator in silicon-on-insulator technology based on breaking the symmetry of the waveguide cross section is reported. The 25- μm-long device is designed to be integrated with standard grating couplers without the need for extra fabrication steps. Hence, fabrication is carried out by a 2-etch-step complementary metal-oxide-semiconductor compatible process using 193-nm deep ultraviolet lithography. A polarization conversion efficiency of more than -0.85 & dB with insertion losses ranging from -1 to -2.5 & dB over a wavelength range of 30 nm is demonstrated.