作者
P Sanchis, JV Galan, A Griol, J Marti, MA Piqueras, JM Perdigues
发表日期
2007/9/24
期刊
IEEE Photonics Technology Letters
卷号
19
期号
20
页码范围
1583-1585
出版商
IEEE
简介
Low crosstalk losses in silicon-on-insulator waveguides are demonstrated by choosing the optimum crossing angle. It is obtained that by using the crossing angles of 60deg or 120deg instead of the conventional 90deg crossing angle crosstalk losses are improved by more than 10 dB without degrading transmission losses. Experimental results show a very good agreement with three-dimensional finite-difference time-domain simulation results. The proposed crossing structure has a high compactness, a broad bandwidth with almost flat transmission losses and constant crosstalk losses, and is robust against fabrication inaccuracies.
引用总数
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学术搜索中的文章
P Sanchis, JV Galan, A Griol, J Marti, MA Piqueras… - IEEE Photonics Technology Letters, 2007