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A nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N free n-type GaAs. Furthermore, its density increases markedly with increasing N, persists to post thermal annealing, and found to be quasi-uniform distributed in the bulk of GaAsN. Based on first-principles calculation, the electron trap is associated with a split interstitial defect formed from N and As atoms on the same As lattice site (As–N) As.