作者
Ross Cheriton, Matthew M Wilkins, Pratibha Sharma, Christopher E Valdivia, Anna H Trojnar, Henry Schriemer, Karin Hinzer, James Gupta, Boussairi Bouzazi, Gitanjali Kolhatkar, Abderraouf Boucherif, Abdelatif Jaouad, Simon Fafard, Vincent Aimez, Richard Arès
发表日期
2016/3/1
期刊
Journal of Vacuum Science & Technology B
卷号
34
期号
2
出版商
AIP Publishing
简介
The InGaAsN (Sb) material system is an attractive candidate for use in lattice-matched four-junction (4J) solar cells based on germanium substrates. Design optimizations for an InGaAsN (Sb) subcell are proposed for optimal power conversion efficiency within a 4J solar cell under a highly concentrated AM1. 5D solar spectrum. The performance of the subcell is modeled using drift-diffusion simulations using Crosslight Apsys. An InGaAsN (Sb) test subcell was fabricated to obtain realistic materials parameters for the optimization of subcell performance. A thin InGaAsN (Sb) subcell is suggested for operation at 1000 Sun illumination intensities at low carrier lifetimes and mobilities.
学术搜索中的文章
R Cheriton, MM Wilkins, P Sharma, CE Valdivia… - Journal of Vacuum Science & Technology B, 2016