查看文章

One-dimensional (1D) semiconducting nanostructures,[1] such as nanowires (NWs) and nanobelts (NBs), are fundamental building blocks for constructing nanoscale electronic devices [2] because of their small size and the enhanced charge carrier mobility owing to 1D confinement. Considerable efforts have been devoted to energy-band engineering by doping for controlling their electrical properties and assembling NWs into increasingly complex structures.[2a, 2b, 2d, 3] The rectifier, a fundamental device for electronics, normally consists of a p–n junction diode. The role of the dopants is the formation of a p–n junction and creation of an electrostatic potential energy barrier at the junction.

ZnO exhibits the most diverse and abundant configurations of nanostructures known so far, such as NWs, NBs, nanosprings, nanorings, nanobows, and nanohelices.[4] Numerous studies based on ZnO nanostructures have demonstrated novel applications due to their semiconducting and piezoelectric properties.[1a, 1e, 5] For ZnO, n-type conductivity is relatively easy to realize via excess Zn, or with Al, Ga, or In doping, but p-type doping has only recently been achieved.[6] This leads to the conclusion that the generation of p-type material is one of the last major obstacles hindering the development of ZnO-based electronic and optoelectronic devices. There are many possible strategies for doping ZnO in order to make p–n junctions for advancing the technological uses of ZnO-based electronic and optoelectronic devices.[6] As an alternative approach for achieving p-type ZnO, we have been exploring the potential of coupling the piezoelectric effect with the …