作者
Su‐Ting Han, Liang Hu, Xiandi Wang, Ye Zhou, Yu‐Jia Zeng, Shuangchen Ruan, Caofeng Pan, Zhengchun Peng
发表日期
2017/8
期刊
Advanced Science
卷号
4
期号
8
出版商
Wiley
简介
Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.
学术搜索中的文章
ST Han, L Hu, X Wang, Y Zhou, YJ Zeng, S Ruan… - Advanced Science, 2017