作者
Su‐Ting Han, Ye Zhou, Chundong Wang, Lifang He, Wenjun Zhang, VAL Roy
发表日期
2013/2/7
期刊
Advanced Materials
卷号
6
期号
25
页码范围
872-877
简介
A hybrid double‐floating‐gate flexible memory device by utilizing an rGO‐sheet monolayer and a Au NP array as upper and lower floating gates is reported. The rGO buffer layer acts as a charge‐trapping layer and introduces an energy barrier between the Au NP lower floating gate and the channel. The proposed memory device demonstrates a strong improvement in both field‐effect‐transistor (FET) and memory characteristics.
学术搜索中的文章
ST Han, Y Zhou, C Wang, L He, W Zhang, VAL Roy - Advanced Materials, 2013