作者
Rongsie Xie, Can Zhang, MH Van der Veen, Kai Arstila, Thomas Hantschel, Bingan Chen, Guofang Zhong, John Robertson
发表日期
2013/3/6
期刊
Nanotechnology
卷号
24
期号
12
页码范围
125603
出版商
IOP Publishing
简介
Through silicon via (TSV) technology is key for next generation three-dimensional integrated circuits, and carbon nanotubes (CNT) provide a promising alternative to metal for filling the TSV. Three catalyst preparation methods for achieving CNT growth from the bottom of the TSV are investigated. Compared with sputtering and evaporation, catalyst deposition using dip-coating in a FeCl 2 solution is found to be a more efficient method for realizing a bottom-up filling of the TSV (aspect ratio 5 or 10) with CNT. The CNT bundles grown in 5 min exceed the 50 μm length of the TSV and are multi-wall CNT with three to eight walls. The CNT bundles inside the TSV were electrically characterized by creating a direct contact using a four-point nanoprober setup. A low resistance of the CNT bundle of 69.7 Ω (297 Ω) was measured when the CNT bundle was contacted midway along (over the full length of) the 25 μm deep TSV …
学术搜索中的文章
R Xie, C Zhang, MH Van der Veen, K Arstila… - Nanotechnology, 2013