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Series-connected four (quad) junctions (4J) resulting from the combination of III-V and group IV materials have the potential to improve solar cells efficiency under concentration (X). In this work, we investigate the performance of dual junction (2J) GaInP/GaAs that might be used with group IV (SiGeSn) cells as bottom cells, to validate the epitaxial structure and the fabrication process of future 4J cells. We vary gridline spacings for two different solar cells sizes, to optimize solar cells performance in the range of 100X to 1000X. The obtained results are close to the state-of-the-art and are promising for high performance 4J.