作者
A Turala, P Regreny, P Rojo-Romeo, C Priester, M Gendry
发表日期
2006/5/8
研讨会论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
页码范围
214-217
出版商
IEEE
简介
This work is devoted lo the localization of InAs quantum dots (QDs) grown by solid-source molecular beam epitaxy on nanostructured InP(001) surfaces, which will find application in quantum or classical devices operating at the wavelength of 1.55 mum. The dots are grown on the mesas or in the holes, which are designed to be the sites of privileged nucleation of the quantum dots
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A Turala, P Regreny, P Rojo-Romeo, C Priester… - 2006 International Conference on Indium Phosphide …, 2006