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We report DC results from a We=100nm InP/InGaAs DHBT technology with a self-aligned MOCVD regrown GaAs extrinsic base providing low base access resistance Rbb while maintaining acceptable DC current gain β. A 0.09×5μm ² transistor exhibits a base contact resistivity ρ _c =1Ω-μm ² , and a peak β ~ 15. The HBTs exhibit a common-emitter breakdown voltage BVCEO=3.6V(JC=10μA/μm ² ). According to the general scaling law for InP HBTs in [1], the low ρ _c meets the requirement for f _max =2.8THz operation.