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A new method to improve the integration level of an on-chip diffractive optical neural network (DONN) is proposed based on a standard silicon-on-insulator (SOI) platform. The metaline, which represents a hidden layer in the integrated on-chip DONN, is composed of subwavelength silica slots, providing a large computation capacity. However, the physical propagation process of light in the subwavelength metalinses generally requires an approximate characterization using slot groups and extra length between adjacent layers, which limits further improvements of the integration of on-chip DONN. In this work, a deep mapping regression model (DMRM) is proposed to characterize the process of light propagation in the metalines. This method improves the integration level of on-chip DONN to over 60,000 and elimnates the need for approximate conditions. Based on this theory, a compact-DONN (C-DONN) is …