作者
Steven Lequeux, Joao Sampaio, Vincent Cros, Kay Yakushiji, Akio Fukushima, Rie Matsumoto, Hitoshi Kubota, Shinji Yuasa, Julie Grollier
发表日期
2016/8/19
期刊
Scientific reports
卷号
6
期号
1
页码范围
31510
出版商
Nature Publishing Group UK
简介
Memristors are non-volatile nano-resistors which resistance can be tuned by applied currents or voltages and set to a large number of levels. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a multilevel memristor compatible with spin-torque magnetic random access memories. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our …
学术搜索中的文章
S Lequeux, J Sampaio, V Cros, K Yakushiji… - Scientific reports, 2016
S Lequeux, J Sampaio, V Cros, K Yakushiji… - arXiv preprint arXiv:1605.07460, 2016