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The proposed silicon-on-insulator Schottky barrier (SOI-SB) nanowire metal–oxide–semiconductor field-effect transistor (NW-MOSFET) is extensively investigated to further improve its analog/radiofrequency (RF) performance. The proposed device shows effectively improved electrostatic control and a reduced ambipolar effect in the OFF-state current. Simulations of the proposed device are conducted and compared with a dielectric pocket Schottky barrier NW-MOSFET for a channel length of 22 nm and radius 5 nm. The SOI-SB NW-MOSFET shows improved performance in terms of I_OFF current, I_ON/I_OFF ratio, subthreshold slope, early voltage, transconduction generation factor, and intrinsic gain.