作者
Amit Saxena, Manoj Kumar, Ravindra Kumar Sharma, R S Gupta
发表日期
2020/5/14
期刊
Journal of Electronic Materials
出版商
Journal of ELECTRONIC MATERIALS https://doi.org/10.1007/s11664-020-08164-0
简介
The proposed silicon-on-insulator Schottky barrier (SOI-SB) nanowire metal–oxide–semiconductor field-effect transistor (NW-MOSFET) is extensively investigated to further improve its analog/radiofrequency (RF) performance. The proposed device shows effectively improved electrostatic control and a reduced ambipolar effect in the OFF-state current. Simulations of the proposed device are conducted and compared with a dielectric pocket Schottky barrier NW-MOSFET for a channel length of 22 nm and radius 5 nm. The SOI-SB NW-MOSFET shows improved performance in terms of IOFF current, ION/IOFF ratio, subthreshold slope, early voltage, transconduction generation factor, and intrinsic gain.
学术搜索中的文章
A Saxena, M Kumar, RK Sharma, RS Gupta - Journal of Electronic Materials, 2020