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Simple and integrable MOS-only memristor emulator circuits exploiting a dynamic threshold feature of MOSFET and requiring no DC bias have been presented here. The propositions herein require no external capacitors. In these two circuit propositions of floating and grounded memristor emulators, the static power consumption is zero. Theoretical justifications of the propositions have been validated by simulations carried out on the Cadence Virtuoso-Spectre tool with 180 nm CMOS GPDK parameters. Further, the experimental verification has also been done using ALD1116 and ALD1117 MOSFETs to demonstrate the practical viability of the memristor emulators of this communication.