作者
O Wada, H Nobuhara, H Hamaguchi, T Mikawa, A Tackeuchi, T Fujii
发表日期
1989/1/2
期刊
Applied physics letters
卷号
54
期号
1
页码范围
16-17
出版商
American Institute of Physics
简介
A lateral structure metal‐semiconductor‐metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro‐optic sampling to exhibit a full width at half maximum of 14.7 ps.
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O Wada, H Nobuhara, H Hamaguchi, T Mikawa… - Applied physics letters, 1989