作者
Tomoyuki Akiyama, Nikolai Georgiev, Teruo Mozume, Haruhiko Yoshida, A Venu Gopal, Osamu Wada
发表日期
2001/1/18
期刊
Electronics Letters
卷号
37
期号
2
页码范围
129-130
出版商
IET Digital Library
简介
Values for the nonlinearity and recovery time of 1.55 µm intersubband absorption have been experimentally obtained for the first time by using InGaAs/AlAs/AlAsSb coupled quantum wells. The third-order susceptibility (χ(3)) has been evaluated to be 5.8×10-17 m2/V2. An ultrafast recovery time (τ) of ~685 fs has been obtained while keeping the figure of merit (χ(3)/ατ) as large as those of interband transitions.
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