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Vanadium sesquioxide (V 2 O 3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure, and doping are varied, giving rise to different structural, magnetic, or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V 2 O 3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in thin film compounds so far. Here, via continuous lattice deformations induced by heteroepitaxy, we demonstrate a room temperature Mott metal–insulator transition in 1.5% Cr-doped and pure V 2 O 3 thin films. By means of a controlled epitaxial strain, not only the structure but also the intrinsic electronic and optical properties of the thin films are stabilized at different intermediate states between the metallic and insulating phases, inaccessible in bulk materials. This leads to films with unique features such as a …