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We demonstrate efficient, polarized and monolithic white semipolar (20–21) InGaN light-emitting diodes (LEDs) grown on high crystal quality 4-inch (20–21) GaN/sapphire template. Materials growth by metal-organic chemical vapor deposition (MOCVD) and characterization by atom probe tomography (APT) were carried out. The fabricated regular 0.1 mm² size LEDs show a high electrical performance with an output power of 3.9 mW at 100 mA, an emission spectrum with two peaks located at 445 nm and 565 nm, a CIE point of (0.37, 0.42) and a polarization ratio of 0.30, which make them promising candidates for backlighting in liquid crystal displays (LCDs) application. Moreover, the fabricated square phosphor-free white μLED with size ranging from 20 to 60 μm, exhibit a high 3 dB modulation bandwidth of 660 MHz in the visible light communication (VLC) system, which benefits from the shorter carrier …