发明者
John E Cunningham, Jin Yao, Ivan Shubin, Guoliang Li, Xuezhe Zheng, Shiyun Lin, Hiren D Thacker, Stevan S Djordjevic, Ashok V Krishnamoorthy
发表日期
2015/9/22
专利局
US
专利号
9142698
专利申请号
14252607
简介
Silicon photonics is a promising technology that can pro vide large communication bandwidth, low latency and low power consumption for inter-chip and intra-chip optical inter connects or links. A key component for use in inter-chip and intra-chip optical interconnects is a modulator that can be monolithically integrated into the same silicon layer as tran sistors and other optical components. Some approaches for implementing silicon-photonic modulators are based on germanium, which is an efficient absorbing material at infrared wavelengths that include a 1.5 um band for electro-absorptive modulator applications. For example, for high-performance transistors, a silicon layer can either be strained by the addition of germanium layers or used as a direct, mobility-enhanced silicon-germanium layer. Consequently, there is considerable interest in integrating alloys of germanium on silicon from both an optical and an …
引用总数
20172018201920202021202220232024317123
学术搜索中的文章
JE Cunningham, J Yao, I Shubin, G Li, X Zheng, S Lin… - US Patent 9,142,698, 2015