作者
Xiongchuan Huang, Pieter Harpe, Guido Dolmans, Harmke de Groot, John R Long
发表日期
2014/5
期刊
IEEE Journal of Solid-State Circuits
卷号
49
期号
5
页码范围
1135-1147
出版商
IEEE
简介
An on/off keying receiver has been designed in 90 nm CMOS for low-power event-driven applications. Thanks to the synchronized-switching technique and power-efficient RF gain stages, this receiver achieves -86 dBm sensitivity (10 -3 bit error rate) at 10 kbps while consuming 123 μW from a 1 V supply. The receiver is highly scalable in data rates from 1 kbps at 64 μW to 100 kbps at 146 μW power consumption. The center frequency of the receiver can be also programmed from 780 to 950 MHz, covering different sub-GHz bands worldwide. The receiver is fully integrated, although an external SAW filter can be added for better selectivity.
引用总数
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