作者
T Sakamoto, H Sunamura, H Kawaura, T Hasegawa, T Nakayama, M Aono
发表日期
2003/5/5
期刊
Applied Physics Letters
卷号
82
期号
18
页码范围
3032-3034
出版商
American Institute of Physics
简介
We describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance. The switch consists of a copper sulfide film, which is a chalcogenide semiconductor, sandwiched between copper and metal electrodes. Applying a positive or negative voltage to the metal electrode can repeatedly switch its conductance in under 100 μs. Each state can persist without a power supply for months, demonstrating the feasibility of nonvolatile memory with its nanometer scale. While biasing voltages, copper ions can migrate in copper sulfide film and can play an important role in switching.
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