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The admittances and subthreshold characteristics of capacitors and MOSFETs on buried and surface In 0.53 Ga 0.47 As channel flatband wafers, with a dielectric of Al 2 O 3 deposited on In 0.53 Ga 0.47 As, are reported. The admittance characteristics of both wafers indicate the presence of defect states within the oxide, in common with a number of other oxides on In 0.53 Ga 0.47 As. The two wafers studied have not been hydrogen annealed, but do show some similar features to FGA treated oxides on n+ substrates. We discuss how the possible presence of residual hydroxyl ions in as-grown Al 2 O 3 may explain these similarities and also account for many of the changes in the properties of FGA treated n+ samples. The issues around the comparison of subthreshold swing (SS) results and the impact of transistor design parameters on the energy portion of the defect state distribution affecting efficient device …