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Epitaxial growth of nanowires along the ⟨111⟩ directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to ⟨111⟩ growth, ⟨110⟩ growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.