查看文章

We report experimental and theoretical studies of defects producing fixed charge within Al 2 O 3 layers grown by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As (001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al 2 O 3/n-In 0.53 Ga 0.47 As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al 2 O 3⁠. We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al 2 O 3⁠.