作者
SR Das, JP McCaffrey, JG Cook, JB Webb
发表日期
1990/3/1
期刊
Semiconductor science and technology
卷号
5
期号
3S
页码范围
S315
出版商
IOP Publishing
简介
Heteroepitaxial (100) CdTe//(100) InSb structures with chemically abrupt and morphologically smooth interfaces have been grown on (100) GaAs by a combination of metalorganic magnetron sputtering for InSb and low-energy bias sputtering for CdTe. The range of growth conditions under which high-quality heterostructures can be fabricated, however, seems to be quite restricted.
学术搜索中的文章
SR Das, JP McCaffrey, JG Cook, JB Webb - Semiconductor science and technology, 1990