作者
PY Timbrell, J‐M Baribeau, DJ Lockwood, JP McCaffrey
发表日期
1990/5/15
期刊
Journal of applied physics
卷号
67
期号
10
页码范围
6292-6300
出版商
American Institute of Physics
简介
The generation of interface misfit dislocations, and the accompanying strain relaxation, in a molecular‐beam epitaxy grown 0.17 μm thick metastable Si0.82Ge0.18/Si(100) strained epilayer have been studied in detail as a function of rapid thermal annealing treatments over the 500–850 °C temperature range. Charge collection and transmission electron microscopy were used to determine the onset of relaxation by directly imaging misfit dislocations and to investigate the variation in dislocation density with increasing anneal temperature. The strain variation in the epilayer was carefully monitored using double‐crystal x‐ray diffraction and Raman spectroscopy, and the annealing induced changes in strain related to the electron microscopy observed density of interface misfit dislocations. The relative merit of each experimental technique is discussed in the light of these results. The generation of strain relieving …
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PY Timbrell, JM Baribeau, DJ Lockwood, JP McCaffrey - Journal of applied physics, 1990