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The influence of an external resistance on the performance of VO 2 nanogap junctions is analyzed and experimentally characterized. The current-voltage response shows the reversible metal-insulator transition typical of VO 2 based devices. When reaching the metallic state, the current through the VO 2 junction is abruptly increased, which may result in electrical contact damage. Therefore, an external resistance in series with the VO 2 junction is usually employed to limit the maximum current through the device. Our results indicate that the external resistance plays a key role in the switching power consumption showing an optimum value, which depends on the dimensions of the VO 2 junction. In such a way, power consumption reductions up to 90% have been demonstrated by selecting the optimum external resistance value.

Vanadium dioxide (VO 2) is a transition metal oxide specially considered for the …