作者
J Zhang, Julien Frougier, Andrew Greene, X Miao, Lan Yu, Reinaldo Vega, Pietro Montanini, Curtis Durfee, Andrew Gaul, Shanti Pancharatnam, C Adams, H Wu, Huimei Zhou, Tian Shen, Ruilong Xie, M Sankarapandian, J Wang, Koji Watanabe, Ruqiang Bao, X Liu, Chanro Park, Hosadurga Shobha, P Joseph, Dexin Kong, A Arceo De La Pena, Juntao Li, Richard Conti, Dan Dechene, Nicolas Loubet, Robin Chao, Tenko Yamashita, Russ Robison, Veeraraghavan Basker, Kai Zhao, Dechao Guo, Bala Haran, Rama Divakaruni, Huiming Bu
发表日期
2019/12/7
研讨会论文
2019 IEEE International Electron Devices Meeting (IEDM)
页码范围
11.6. 1-11.6. 4
出版商
IEEE
简介
In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme vs punch through stopper (PTS) scheme has been systematically studied. By comparing off-state leakage current, short channel behavior and effective capacitance (Ceff) for both schemes, we show that BDI could potentially provide: 1) good immunity of sub-channel leakage due to process variation (from parasitic "fat-Fin" which is unique in Nanosheet structure); 2) power-performance co-optimization.
学术搜索中的文章
J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega… - 2019 IEEE International Electron Devices Meeting …, 2019