作者
Anwar Jarndal, Saddam Husain, Mohammad Hashmi, Fadhel M Ghannouchi
发表日期
2020/11/3
期刊
IEEE Journal of the Electron Devices Society
卷号
9
页码范围
195-208
出版商
IEEE
简介
This article presents an extensive study and demonstration of efficient electrothermal large-signal GaN HEMT modeling approaches based on combined techniques of Genetic Algorithm (GA) with Artificial Neural Networks (ANN), and Particle Swarm optimization (PSO) with Support Vector Regression (SVR). Another promising Gaussian Process Regression (GPR) based large-signal modeling approach is also explored and presented. The GA-ANN addresses the typical problem of local minima associated with the backpropagation (BP) based ANN. The GA successfully aids in the determination of optimal initial values for BP-ANN and enables it to find a unique optimal solution after subsequent of iterations with higher rate of convergence. This is also achieved using PSO-SVR with lower optimization variables. The developed modeling techniques are demonstrated and used to simulate the gate and drain currents of …
学术搜索中的文章
A Jarndal, S Husain, M Hashmi, FM Ghannouchi - IEEE Journal of the Electron Devices Society, 2020