查看文章

A novel antifuse structure with amorphous bismuth zinc niobate (a-BZN) dielectrics was proposed. The characteristics of the a-BZN antifuse were investigated. Programming direction of up to down was chosen to rupture the a-BZN antifuse. The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V. A large off-state resistance of more than 1 GΩ for the a-BZN antifuse was demonstrated. The surface micrograph of the ruptured a-BZN antifuses was illustrated. Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1 Ω of the a-BZN antifuse were exhibited. The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate (cp-BZN) antifuse and gate oxide antifuse was compared and analyzed.

English Abstract